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SUPPLEMENT
Am29F200A Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory--Die Revision 1
DISTINCTIVE CHARACTERISTICS
s 5.0 V 10% for read and write operations -- Minimizes system level power requirements s High performance -- 90 or 120 ns access time s Low power consumption -- 20 mA typical active read current (byte mode) -- 28 mA typical active read current for (word mode) -- 30 mA typical program/erase current -- 1 A typical standby current s Sector erase architecture -- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and three 64 Kbyte sectors (byte mode) -- One 8 Kword, two 4 Kword, one 16 Kword, and three 32 Kword sectors (word mode) -- Supports full chip erase -- Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms -- Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors -- Embedded Program algorithm automatically writes and verifies data at specified addresses s Minimum 100,000 write/erase cycles guaranteed s Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply flash -- Superior inadvertent write protection s Data# Polling and Toggle Bit -- Detects program or erase cycle completion s Ready/Busy# output (RY/BY#) -- Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume -- Supports reading data from a sector not being erased s Hardware RESET# pin -- Resets internal state machine to the reading array data s Tested to datasheet specifications at temperature s Quality and reliability levels equivalent to standard packaged components
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Publication# 21257 Rev: B Amendment/0 Issue Date: December 1997
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GENERAL DESCRIPTION
The Am29F200A in Known Good Die (KGD) form is a 2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29F200A Features The Am29F200A is organized as 262,144 bytes of 8 bits each or 131,072 words of 16 bits each. The 8-bit data appears on DQ0-DQ7; the 16-bit data appears on DQ0-DQ15. This device is designed to be programmed in-system with the standard system 5.0 Volt V CC supply. A 12.0 volt VPP is not required for program or erase operations. The standard Am29F200A in KGD form offers an access time of 90 or 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array ( if it is not already pro-
grammed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6/ DQ2 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F200A data sheet, publication number 20380, for full electrical specifications on the Am29F200A.
PRODUCT SELECTOR GUIDE
Family Part Number Speed Option (VCC = 5.0 V 10%) Max access time, ns (tACC) Max CE# access time, ns (tCE) Max OE# access time, ns (tOE) -90 90 90 35 Am29F200A KGD -120 120 120 50
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DIE PHOTOGRAPH
Orientation relative to top left corner of Gel-Pak
Orientation relative to leading edge of tape and reel
DIE PAD LOCATIONS
9 10 11 12 8 7 6 5 4 3 2 1 42 41 40 39 38 37 36 35 34 33 32 31
AMD logo location
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 30 29 28
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PAD DESCRIPTION
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Signal VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X Y 0.0 0.0 8.5 -1.2 -17.3 -1.2 -26.1 -1.2 -34.9 -1.2 -43.6 -1.2 -52.4 -1.2 -61.2 -1.2 -69.9 -1.2 -80.2 2.7 -82.3 -13.5 -82.3 -24.1 -82.3 -128.4 -82.3 -138.7 -82.3 -150.0 -68.2 -150.0 -57.9 -150.0 -47.6 -150.0 -36.7 -150.0 -26.4 -150.0 -16.1 -150.0 -5.2 -150.0 26.1 -150.0 50.2 -150.0 60.5 -150.0 70.8 -150.0 81.1 -150.0 91.4 -150.0 91.5 -138.7 91.5 -128.4 91.5 -24.1 91.5 -13.6 91.1 1.8 79.8 -0.7 70.0 -1.2 61.3 -1.2 52.5 -1.2 43.7 -1.2 34.9 -1.2 26.2 -1.2 17.4 -1.2 8.6 -1.2 Pad Center (millimeters) X Y 0.0000 0.0000 -0.2159 -0.0305 -0.4394 -0.0305 -0.6629 -0.0305 -0.8865 -0.0305 -1.1074 -0.0305 -1.3310 -0.0305 -1.5545 -0.0305 -1.7755 -0.0305 -2.0371 0.0686 -2.0904 -0.3429 -2.0904 -0.6121 -2.0904 -3.2614 -2.0904 -3.5230 -2.0904 -3.8100 -1.7323 -3.8100 -1.4707 -3.8100 -1.2090 -3.8100 -0.9322 -3.8100 -0.6706 -3.8100 -0.4089 -3.8100 -0.1321 -3.8100 0.6629 -3.8100 1.2751 -3.8100 1.5367 -3.8100 1.7983 -3.8100 2.0599 -3.8100 2.3216 -3.8100 2.3241 -3.5230 2.3241 -3.2614 2.3241 -0.6121 2.3241 -0.3454 2.3139 0.0457 2.0269 -0.0178 1.7780 -0.0305 1.5570 -0.0305 1.3335 -0.0305 1.1100 -0.0305 0.8865 -0.0305 0.6655 -0.0305 0.4420 -0.0305 0.2184 -0.0305
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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ORDERING INFORMATION Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F200A T -90 DP C 1 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to +85C) E = Extended (-55C to +125C) PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 245 die per 5 tray stack DG = DT = DW = Gel-Pak(R) Die Tray 486 die per 6 tray stack SurftapeTM (Tape and Reel) 2500 per 7-inch reel Gel-Pak(R) Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity
SPEED OPTION See Valid Combinations
BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector
DEVICE NUMBER/DESCRIPTION Am29F200A Known Good Die 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory--Die Revision 1 5.0 Volt-only Read, Program, and Erase
Valid Combinations Am29F200AT-90, Am29F200AB-90 Am29F200AT-120, Am29F200AB-120 DPC 1, DPI 1, DPE 1, DGC 1, DGI 1, DGE 1, DTC 1, DTI 1, DTE 1, DWC 1, DWI 1, DWE 1
Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
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PRODUCT TEST FLOW
Figure 1 provides an overview of AMD's Known Good Die test flow. For more detailed information, refer to the Am29F200A product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in.
Wafer Sort 1
DC Parameters Functionality Programmability Erasability
Bake 24 hours at 250C
Data Retention
Wafer Sort 2
DC Parameters Functionality Programmability Erasability
Wafer Sort 3 High Temperature
DC Parameters Functionality Programmability Erasability Speed
Packaging for Shipment
Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack
Shipment
Figure 1.
AMD KGD Product Test Flow
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PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 191 mils x 174 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.85 mm x 4.42 mm Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . ~20 mils Bond Pad Size . . . . . . . . . . . . . . 4.55 mils x 4.55 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.6 m x 115.6 m Pad Area Free of Passivation . . . . . . . . . .20.70 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13,363 m2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Cu/Si Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SDC Manufacturing ID (Top Boot) . . . . . . . . . . . . 98483AK (Bottom Boot) . . . . . . . .98483ABK Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . CS29AF Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V Junction Temperature Under Bias . .TJ (max) = 130C Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0C to +70C Industrial . . . . . . . . . . . . . . . . . . . -40C to +85C Extended . . . . . . . . . . . . . . . . . . -55C to +125C
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TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this agreement shall be subject to AMD's standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD's standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants articles of its manufacture against defective materials or workmanship for a period of ninety (90) days from date of shipment. This warranty does not extend beyond AMD's customer, and does not extend to die which has been affixed onto a board or substrate of any kind. The liability of AMD under this warranty is limited, at AMD's option, solely to repair or to replacement with equivalent articles, or to make an appropriate credit adjustment not to exceed the original sales price, for articles returned to AMD, provided that: (a) The Buyer promptly notifies AMD in writing of each and every defect or nonconformity in any article for which Buyer wishes to make a warranty claim against AMD; (b) Buyer obtains authorization from AMD to return the article; (c) the article is returned to AMD, transportation charges paid by AMD, F.O.B. AMD's factory; and (d) AMD's examination of such article discloses to its satisfaction that such alleged defect or nonconformity actually exists and was not caused by negligence, misuse, improper installation, accident or unauthorized repair or alteration by an entity other than AMD. The aforementioned provisions do not extend the original warranty period of any article which has either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD'S PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD SHA L L N O T I N A N Y E V EN T B E L IA B LE F OR DAMAGES BY REASON OF FAILURE OF ANY PRODUCT TO FUNCTION PROPERLY OR FOR ANY SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS OF USE OR COST OF LABOR BY REASON OF THE FACT THAT SUCH ARTICLES SHALL HAVE BEEN DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD's warranty. Buyer assumes all responsibility for successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD Products which are the subject hereof, AMD assumes no responsibility for environmental effects on die. AMD products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer's use of AMD products for use in life support applications is at Buyer's own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale.
REVISION SUMMARY FOR AM29F200A KNOWN GOOD DIE
Formatted to match current template. Updated Distinctive Characteristics and General Description sections using the current main data sheet.
Trademarks Copyright (c) 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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